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  gll4735 to gll4763a document number 85781 rev. 1.4, 06-aug-04 vishay semiconductors www.vishay.com 1 18267 zener diodes features ? plastic package has underwriters laboratory flammability classification 94 v-0  for surface mounted applications  glass passivated chip junction  low zener impedance  low regulation factor  high temperature soldering guaranteed: 250 c/ 10 seconds at terminals mechanical data case: melf plastic molded plastic over glass passi- vated junction terminals: solder plated, solderable per mil-std- 750, method 2026 polarity: red band denotes zener diode and positive end (cathode) mounting position: any weight: 0.0046oz., 116 mg packaging codes/options: 26 / 5 k per 13 " reel (12 mm tape), 60 k/box 46 / 1.5 k per 7 " reel (12 mm tape), 30 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit zener current (see table "characteristics") power dissipation p tot 1.0 3) w parameter test condition symbol value unit thermal resistance junction to ambient air r thja 170 c/w junction temperature t j 150 c storage temperature t s - 65 to + 150 c
www.vishay.com 2 document number 85781 rev. 1.4, 06-aug-04 gll4735 to gll4763a vishay semiconductors electrical characteristics (1) standard voltage tolerance is 10 %, suffix a = 5 % (2) surge current is a non-repetitive, 8.3 ms pulse width square wave or equivalent sine-wave superimposed on i zt per jedec method (3) maximum steady state power dissipation is 1.0 watt at t t = 75 c partnumber nominal zener voltage 1) te s t current maximum dynamic impedance maximum dc reverse leakage current maximum zener current (2) maximum forward voltage v z @ i zt i zt1 z zt @ i zt z zk @ i zk i zk i r v r i zm v f @ 200 ma v ma ? ? ma a v ma pk v gll4735 6.2 41 2 700 1 50 3 730 1.2 gll4736 6.8 37 3.5 700 1 10 4 660 1.2 gll4737 7.5 34 4 700 0.5 10 5 605 1.2 gll4738 8.2 31 4.5 700 0.5 10 6 550 1.2 gll4739 9.1 28 5 700 0.5 10 7 500 1.2 gll4740 10 25 7 700 0.25 10 7.6 454 1.2 gll4741 11 23 8 700 0.25 5 8.4 414 1.2 gll4742 12 21 9 700 0.25 5 9.1 380 1.2 gll4743 13 19 10 700 0.25 5 9.9 344 1.2 gll4744 15 17 14 700 0.25 5 11.4 305 1.2 gll4745 16 15.5 16 700 0.25 5 12.2 285 1.2 gll4746 18 14 20 750 0.25 5 13.7 250 1.2 gll4747 20 12.5 22 750 0.25 5 15.2 225 1.2 gll4748 22 11.5 23 750 0.25 5 16.7 205 1.2 gll4749 24 10.5 25 750 0.25 5 18.2 190 1.2 gll4750 27 9.5 35 750 0.25 5 20.6 170 1.2 gll4751 30 8.5 40 1000 0.25 5 22.8 150 1.2 gll4752 33 7.5 45 1000 0.25 5 25.1 135 1.2 gll4753 36 7 50 1000 0.25 5 27.4 125 1.2 gll4754 39 6.5 60 1000 0.25 5 29.7 115 1.2 gll4755 43 6 70 1500 0.25 5 32.7 110 1.2 gll4756 47 5.5 80 1500 0.25 5 35.8 95 1.2 gll4757 51 5 95 1500 0.25 5 38.8 90 1.2 gll4758 56 4.5 110 2000 0.25 5 42.6 80 1.2 gll4759 62 4 125 2000 0.25 5 47.1 70 1.2 gll4760 68 3.7 150 2000 0.25 5 51.7 65 1.2 gll4761 75 3.3 175 2000 0.25 5 56 60 1.2 GLL4762 82 3 200 3000 0.25 5 62.2 55 1.2 gll4763 91 2.8 250 3000 0.25 5 69.2 50 1.2
gll4735 to gll4763a document number 85781 rev. 1.4, 06-aug-04 vishay semiconductors www.vishay.com 3 typical characteristics (tamb = 25 c unless otherwise specified) figure 1. maximum continuous power dissipation figure 2. typical instantaneous forward characteristics for gll4763 figure 3. typical temperature coefficients 0 0.25 0.5 0.75 1.0 75 25 50 100 125 150 175 p m(av) -- average power dissipation (w) terminals temperature ( c) 60hz resistive or inductive load p.c.b. mounted on 0.31 x 0.31 x 0.08(8 x 8 x 2mm) copper areas pads 18210 instantaneous forward current (a) 0.01 0.1 1 10 0.4 0.6 0.8 instantaneous forward voltage (v) 11.21.41.6 pulse width = 300 s 1% duty cycle t j =25 c 18211 90 70 50 30 10 0 110 0 30 10 40 50 60 70 80 90 100 v z -- temperature coefficient (mv/ c) tested at rated i zt v z - zener voltage (v) 20 18212 10 1 10 1 0.5 100 1,000 i zt -- zener test current (ma) t j =25 c 100 500 v z =91v v z =56v v z =30v v z =6.2v z z -- dynamic zener impedance ( ? ) 18213 instantaneous reverse current ( a) 0.01 0.1 1 10 02040 percent of rated zener voltage (%) 60 80 100 t j = 25c t j =100 c 18214
www.vishay.com 4 document number 85781 rev. 1.4, 06-aug-04 gll4735 to gll4763a vishay semiconductors package dimensions in inches (mm) 18268 solderable ends 1st band d2=d1 +0 -0.008 (0.20) d2 0.022 (0.56) 0.018 (0.46) 0.205 (5.2) 0.185 (4.7) 1st band denotes type and positive end (cathode) 0.022 (0.56) 0.018 (0.46) d1 = 0.105 (2.67) 0.095 (2.41) mounting pad layout 0.049 (1.25) min. 0.1.57 (4.00) max. 0.256 (6.50) ref. 0.118 (3.00) min. iso method e
gll4735 to gll4763a document number 85781 rev. 1.4, 06-aug-04 vishay semiconductors www.vishay.com 5 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423


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